데이터베이스연구회

□ 사례 11 - 반도체 소자의 소자분리막 형성방법 - ▶분야 : 전기전자(반도체) ▶기술내용 : sti 공정을 이용한 소자분리막 형성방법으로, 트랜치 내에 보이드 없이 절연막을 매립할 수 있어 균일한 문턱전압을 얻을 수 있다. ▶title ○작성내용 : method for forming an isolation x-layer in a semiconductor device by using improved structure ㆍ“향상된 구조”와 같은 모호한 표현은 불필요한 내용임 ○수정내용 : method for forming an isolation x-layer in a semiconductor device to obtain uniform threshold voltage ㆍ발명의 특징적인 내용인 “균일한 문턱전압을 얻는다”는 의미를 추가해주는 것이 적절함 ▶purpose ○작성내용 : a method for forming an isolation x-layer in a semiconductor device is provided to fill an insulation x-layer in a trench without generating a void.○수정 내용a method for forming an isolation x-layer of a semiconductor device is provided to fill an insulation x-layer in a trench without generating voids by forming a trench structure in two steps and by depositing insulation x-layers with different characteristics in the trench. ㆍ“트렌치구조를 이단계로 형성하고 특성이 다른 절연막을 증착한다”라는 내용을 추가하는 것이 바람직함 ▶constitution ○작성내용 : a silicon substrate(21) is prepared which has a hard mask x-layer exposing an isolation region. the substrate in the exposed isolation region is anisotropically etched to form a first trench(23). the first trench can have a sloped lateral profile. the substrate under the first trench is isotropically etched to form a second trench(24). the second trench can have a lateral profile of a jar type. a floating insulation x-layer(21) is formed in the second trench. an insulation x-layer(28) is filled in the first trench. ○수정내용 : a silicon substrate(21) is prepared which has a hard mask x-layer exposing an isolation region. the substrate in the exposed isolation region is anisotropically etched to form a first trench(23). the first trench has a sloped lateral profile, having a thickness of 500~3000 å. the substrate under the first trench is isotropically etched to form a second trench(24). the second trench has a lateral profile of a jar type, having a thickness of 100~10000 å. a floating insulation x-layer(27) is formed in the second trench. the first trench is filled with an insulation x-layer(28). ㆍ본발명의 특징적인 사항인 트랜치의 깊이를 구체적으로 나타내주는 것이 바람직함 ㆍfloating insulation x-layer(21)의 도면부호가 잘못기재됨