나의 활동

guest [손님]
연구회 가입하기

연구회 태그 펼치기/숨기기 버튼

카운터

today 0ltotal 3538
since 2007.04.30
RSS Feed RSS Feed

자료실

게시판상세

[연재 46회] KPA - 잘못 작성된 사례

글쓴이 복진요 작성일 2008.01.22 00:00 조회수 1642 추천 0 스크랩 0
□ 사례 16 - 자기 메모리 소자에서 얇은 절연층 형성 방법 - ▶분야 : 전자(메모리) ▶기술내용 : 자기 메모리 소자의 절연층을 형성할 때, 일부가 과도하게 얇아지는 것을 방지함으로써 균일하고 얇은 두께로 형성하는 방법 ▶title ○작성내용 : method for forming thin insulation film in magnetic memory device, especially preventing generation of locally excessively thinning phenomenon ○수정내용 : method for forming thin insulation x-layer in magnetic memory device, especially for preventing a part of the x-layer from being excessively thinned ·preventing generation of locally excessively thinning phenomenon 명세서에 기재된 ‘국부적인 과도한 얇아짐 현상의 발생’을 직역함으로써 표현이 어색해졌음 ▶purpose ○작성내용 : a method for forming a thin insulation film in a magnetic memory device is provided to form the thin insulation film with uniformly thin thickness, by forming bottom patterns for the memory magnetic device on a semiconductor substrate. ○수정내용 : a method for forming a thin insulation x-layer in a magnetic memory device is provided to form the thin insulation x-layer at uniform thickness, by partially performing cmp(chemical mechanical polishing) and then performing plasma dry etching or wet etching. ·by forming bottom patterns for the memory magnetic device on a semiconductor substrate -> 구성의 한 단계일 뿐, 목적을 뒷받침 할 만한 내용이 아님 ▶constitution ○작성내용 : according to a method for forming a thin insulation film in a magnetic memory device, bottom patterns for the magnetic memory device are formed on a semiconductor substrate(100). an insulation x-layer covering the bottom patterns is formed. the insulation film is planarized by a chemical mechanical polishing(cmp) process, so that the insulation film has a thicker thickness than a target thickness. a thin insulation film(300) is formed by etching the planarized insulation film to the target thickness. ○수정내용 : according to a method for forming a thin insulation x-layer in a magnetic memory device, bottom patterns for the magnetic memory device are formed on a semiconductor substrate(100). an insulation x-layer covering the bottom patterns is formed. the insulation x-layer is planarized by cmp, so that the insulation x-layer has a thickness greater than a target thickness. a thin insulation x-layer(300) is formed by etching the planarized insulation x-layer to the target thickness. ·the insulation film has a thicker thickness than a target thickness에서 thick은 사물 자체를 수식하는 것으로, thickness 앞에 사용하는 것은 틀린 표현임
등록된 태그가 없습니다.