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[연재 41회] KPA - 잘못 작성된 사례 |
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글쓴이 복진요 2008.01.21 00:00 | 조회수 1694 0 스크랩 0 |
□ 사례 11
- 반도체 소자의 소자분리막 형성방법 -
▶분야 : 전기전자(반도체)
▶기술내용 : sti 공정을 이용한 소자분리막 형성방법으로, 트랜치 내에 보이드 없이 절연막을 매립할 수 있어 균일한 문턱전압을 얻을 수 있다.
▶title
○작성내용 : method for forming an isolation x-layer in a semiconductor device by using improved structure
ㆍ“향상된 구조”와 같은 모호한 표현은 불필요한 내용임
○수정내용 : method for forming an isolation x-layer in a semiconductor device to obtain uniform threshold voltage
ㆍ발명의 특징적인 내용인 “균일한 문턱전압을 얻는다”는 의미를 추가해주는 것이 적절함
▶purpose
○작성내용 : a method for forming an isolation x-layer in a semiconductor device is provided to fill an insulation x-layer in a trench without generating a void.○수정 내용a method for forming an isolation x-layer of a semiconductor device is provided to fill an insulation x-layer in a trench without generating voids by forming a trench structure in two steps and by depositing insulation x-layers with different characteristics in the trench.
ㆍ“트렌치구조를 이단계로 형성하고 특성이 다른 절연막을 증착한다”라는 내용을 추가하는 것이 바람직함
▶constitution
○작성내용 : a silicon substrate(21) is prepared which has a hard mask x-layer exposing an isolation region. the substrate in the exposed isolation region is anisotropically etched to form a first trench(23). the first trench can have a sloped lateral profile. the substrate under the first trench is isotropically etched to form a second trench(24). the second trench can have a lateral profile of a jar type. a floating insulation x-layer(21) is formed in the second trench. an insulation x-layer(28) is filled in the first trench.
○수정내용 : a silicon substrate(21) is prepared which has a hard mask x-layer exposing an isolation region. the substrate in the exposed isolation region is anisotropically etched to form a first trench(23). the first trench has a sloped lateral profile, having a thickness of 500~3000 å. the substrate under the first trench is isotropically etched to form a second trench(24). the second trench has a lateral profile of a jar type, having a thickness of 100~10000 å. a floating insulation x-layer(27) is formed in the second trench. the first trench is filled with an insulation x-layer(28).
ㆍ본발명의 특징적인 사항인 트랜치의 깊이를 구체적으로 나타내주는 것이 바람직함
ㆍfloating insulation x-layer(21)의 도면부호가 잘못기재됨
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이전글 | [연재 42회] KPA - 잘못 작성된 사례 |
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다음글 | [연재 40회] KPA - 잘못 작성된 사례 |