한국기계산업진흥회 한국공작기계공업협회 한국기계연구원 국방과학연구소 한국생산기술연구원

나의 활동

guest [손님]
연구회 가입하기

연구회 태그 펼치기/숨기기 버튼

카운터

today 0ltotal 4572
since 2005.09.02
RSS Feed RSS Feed

자료실

게시판상세

FIB-CVD 매커니즘 및 다구찌 기법을 이용한 특성 분석

글쓴이 방승훈 작성일 2007.04.30 00:00 조회수 2509 추천 0 스크랩 0
"Recently, FIB-CVD process has been applied to the micro-manufacturing field such as semi-conductor industry, display industry and IT industry etc. because it is available to fabricate 3D shape of micro structure directly and more effective than any other machining processes in a point of view of the minimum feature size. In this paper, to analyze the FIB-CVD mechanism, we suggested two models relating to the concentration effect of the radical of the precursor and the effect of the physical self-bias potential energy difference of the radical. And we give the conclusion on discussion of the FIB-CVD mechanism suggested and the characteristics of FIB-CVD according m two models through some experiments. Next, we tried to get more effective conditions for improving the deposition yield and minimizing the pattern width. Using the Taguchi method, dwell time could be found as the dominant parameter. Experiments for minimizing the pattern width were carried out. Finally, some remarks about these results were discussed." 더자세한 내용은 첨부파일 참조
등록된 태그가 없습니다.
이모티콘 이모티콘 펼치기
0/400
등록