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FIB-CVD 매커니즘 및 다구찌 기법을 이용한 특성 분석 |
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글쓴이 방승훈 2007.04.30 00:00 | 조회수 2509 0 스크랩 0 |
"Recently, FIB-CVD process has been applied to the micro-manufacturing field such as semi-conductor industry, display industry and IT industry etc. because it is available to fabricate 3D shape of micro structure directly and more effective than any other machining processes in a point of view of the minimum feature size. In this paper, to analyze the FIB-CVD mechanism, we suggested two models relating to the concentration effect of the radical of the precursor and the effect of the physical self-bias potential energy difference of the radical. And we give the conclusion on discussion of the FIB-CVD mechanism suggested and the characteristics of FIB-CVD according m two models through some experiments. Next, we tried to get more effective conditions for improving the deposition yield and minimizing the pattern width. Using the Taguchi method, dwell time could be found as the dominant parameter. Experiments for minimizing the pattern width were carried out. Finally, some remarks about these results were discussed."
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이전글 | 표면처리된 목분이 목분/생분해성 고분자 블랜드의 기계적 물성에 미치는 영향 |
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다음글 | 수치한정발명 연구자료(3) |